In the past, the scientists have already said that they want to find the way to manufacture high-speed and non-volatile universal memory devices.
Guess what! A research group from the University of Southampton’s Southampton Nanofabrication Center discovered that the Nano electromechanical systems (NEMS) available within the new clean room, is the best method to create high-speed yet non-volatile computer memory!
Dr. Yoshishige Tsuchiya, the leader of the research group explained that the high-speed, non-volatile and low-power NEMS memory is the most suitable device, especially for pen drive devices for PICs and mobile applications. In this case, it means the computers can be quickly warmed up, once it being switched on and “sleep” switches to conserve energy, when it’s not in use!
In addition, Dr. Tsuchiya mentioned that he would combine conventional silicon technology with the NEMS concept. The research team had planned to use the new equipment to doing the “Beyond CMOS” (Complementary metal-oxide semiconductor) experiment. Basically, the former involves integrating Nanoelectromechanical System (NEMS) into conventional electronic devices.
As a result, some of the advanced switches, memory and sensor devices could be easily produced and being used in the computer industry very soon![sciencedaily]
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