New generation ballistic transistor

As many of us know, that computer processor speed is limited because of transistor limits. But there is fourth generation transistor invented which is going to change todays technologies significantly.

Specialists from the University of Rochester declared about the creation of ballistic transistor – device, which must become the instrument of new generation.

Instead of improving the current transistor technologies they were experimenting on something different – ballistic transistor.

Scientist Quentin Diduck states that new generation technologies would be measured not in gigahertz’s but shifts to tera-hertz’s.

New device is based on silicon where electrons are in stage of two dimension electron gas. In this stage electrons can move without collision with aggregate substrate atoms.

So called Ballistic Deflection Transistor – BDT working principle is based on electron movement like in pool game where electrons are directed by electric field. The electron movement is smooth an there is no need to forse them. It is enough to give electrons some amount of energy and they inertially will reach the exit.

There can be two stages of transistor “0” and “1”. It depends in which direction electrons are directed by control field. Small demo movie (WMV file, 3.14Mb) demonstrates how it works.

Big advantage of such transistor would be less heat, because of free electron movement, and because of they never are stopped like in regular transistors where electrons are transfered when they are needed and then heat problems causes such problems like changing characteristics because of temperature.

BTD is modern technology, to create and manufacture such ballistic transistors nanotechnology is needed which was unavailable few years ago. If further research will be successful we can expect some revolutions in technology area.

Source: Membrana